Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy

High-optical-quality nanosphere lithographically formed InGaAs quantum dots using molecular beam epitaxy assisted GaAs mass transport and overgrowth

Optically active, highly uniform, cylindrical InGaAs quantum dot QD arrays have been fabricated using nanosphere lithography combined with Bromine ion-beam-assisted etching and molecular beam epitaxy MBE -assisted GaAs mass transport. Previously fabricated QD nanopillar arrays showed significant degradation of optical properties due to the etch damage. Here, a novel mass transport process in a ...

Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy

InGaAs/InGaAsP integrated tunable detector grown by chemical beam epitaxy

By controlling the thickness of the grating depth with chemical beam epitaxy (CBE) growth time, we report in this letter the design and performance of an integrated tunable detector. A carefully designed tunable active filter, which allows only one below threshold Fabry-Perot mode for operation, is integrated with a waveguide detector. The full tuning range of this kind of tunable device can no...

In-situ Determination of Indium Segregation in InGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy

The surface segregation of indium atoms during the growth of InGaAs/GaAs heterostructures has been investigated in situ by re ection high-energy electron di raction (RHEED). We pointed out that the strong damping of the RHEED oscillations during the deposition of InGaAs on GaAs was related to the segregation strength of indium atoms in the InGaAs layer. A simple model shows that the decay const...

Improved performance of strained InGaAs/GaAs photodiodes grown on patterned GaAs substrates by molecular beam epitaxy

We have experimentally studied the photoresponse characteristics of strained In,Gar _ XAs (0.05<~<0.20) p-i-n photodiodes grown in small holes etched in GaAs substrates where the thickness of the i region exceeds the critical thickness. The diodes exhibit enhanced quantum efficiency and no degradation of the temporal response compared with devices grown on planar substrates, indicating that red...